Product model | DP2100 | |||
Flash memory | 3D TLC NAND | |||
Interface | PCIe3.0 x 4，NVMe1.4 | |||
Form factor | M.2 2242，M.22280 | |||
Storage Capacity | 256 GB | 512 GB | 1 TB | 2 TB |
Sequential Read（max） | 3489 MB/s | 3490 MB/s | 3531 MB/s | 3461 MB/s |
Sequential Write（max） | 1383 MB/s | 2589 MB/s | 3419 MB/s | 3416 MB/s |
Random Read（max） | 221000 IOPS | 391000 IOPS | 535000 IOPS | 446000 IOPS |
Random Write（max） | 324000 IOPS | 437000 IOPS | 446000 IOPS | 455000 IOPS |
Features | Support RAID, SRAM ECC, smart block management technology, PLN/PLA, support product customization | |||
Temperature（Operating） | 0℃~+70℃/-40 ℃~+85℃（customizable） | |||
Temperature（Storage） | -40 ℃~85℃/-55 ℃~+90℃（customizable） | |||
Power consumption | Operating power consumption <3.7W, idle power consumption <4mW | |||
Vibration（Operating） | Non-working: 20G, 20~2000Hz | |||
Shock（Operating） | Non-working: 1500G, 0.5ms, 3axis | |||
Identification | RoHS、WEEE、REACH、CE | |||
Facultative | Windows 7/8.1/10；Linux operating system | |||
Application | Industrial computer, industrial development board, industrial process control equipment, server business board, industrial information recording system, optical fiber intelligent terminal, etc | |||
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