* 产品详情- */>
Product model | DP2100 | |||
Flash memory | 3D TLC NAND | |||
Interface | PCIe3.0 x 4,NVMe1.4 | |||
Form factor | M.2 2280 | |||
Storage Capacity | 240 GB | 480 GB | 960 GB | 1920 GB |
Sequential Read(max) | 2470 MB/s | 2482 MB/s | 2480 MB/s | 2465 MB/s |
Sequential Write(max) | 1339 MB/s | 2271 MB/s | 2280 MB/s | 2285 MB/s |
Random Read(max) | 122,000 IOPS | 196000 IOPS | 195000 IOPS | 249000 IOPS |
Random Write(max) | 274000 IOPS | 281000 IOPS | 284000 IOPS | 284000 IOPS |
TBW | 546 TB | 1092 TB | 2184 TB | 4368 TB |
Temperature(Operating) | 0℃~+70℃ | |||
Temperature(Storage) | -40 ℃~+85℃ | |||
Power consumption | Operating power consumption <2.5W, idle power consumption <0.1W(APS 1.2) | |||
Vibration(Operating) | Non-working: 20G, 20~2000Hz | |||
Shock(Operating) | Non-working: 1500G, 0.5ms, 3axis | |||
MTBF | 2 million hours | |||
DWPD | > 1 | |||
Identification | RoHS、WEEE、REACH、CE | |||
Facultative | Windows 7/8.1/10;Linux operating system | |||
Application | Enterprise data centers, enterprise servers, and storage complete system disks | |||