EP2000 Pro

Flash memory

3D TLC NAND

Interface

PCIe 3.0 x 4，NVMe 1.4

Form factor

M.2 2280

Storage Capacity

256 GB

512 GB

1 TB

2 TB

Sequential Read（max）

3500 MB/s

3500 MB/s

3500 MB/s

3500 MB/s

Sequential Write（max）

1400 MB/s

2800 MB/s

3400 MB/s

3300 MB/s

Random Read（max）

208000 IOPS

374000 IOPS

499000 IOPS

425000 IOPS

Random Write（max）

319000 IOPS

550000 IOPS

560000 IOPS

570000 IOPS

TBW

100 TB

200 TB

400 TB

800 TB

MTBF

1.5 million hours

Temperature（Operating）

0°C~+70°C

Temperature（Storage）

-40°C~+85°C

Vibration（Operating）

20G, 80~2000Hz

Shock（Operating）

1500G，0.5ms，3axis

Power consumption

Idle≤0.1W；Active≤3.7W

Identification

RoHS、WEEE、REACH、CE、FCC

Facultative

Windows 7/8.1/10；Linux operating system; Operating systems such as Kirin /UOS

Application

Storage devices such as high-performance desktops, laptops, and all-in-one PCS